tech:start
Differences
This shows you the differences between two versions of the page.
| Both sides previous revisionPrevious revisionNext revision | Previous revision | ||
| tech:start [2015/05/18 23:05] – azonenberg | tech:start [2025/08/04 21:24] (current) – external edit 127.0.0.1 | ||
|---|---|---|---|
| Line 5: | Line 5: | ||
| Devices ≤ 90nm typically have thick top metal with a much larger design rule. There do not appear to be significant scaling trends in top metal pitch below 90nm, | Devices ≤ 90nm typically have thick top metal with a much larger design rule. There do not appear to be significant scaling trends in top metal pitch below 90nm, | ||
| - | ^Node ^Vcore ^Layer count ^[[: | + | There are two Vcore columns. The typical numbers are the nominal operating voltages for standard process, the minimum numbers are the lowest voltages allowed for low-power versions of the process. |
| - | |[[: | + | |
| - | |[[: | + | Typically devices >180 nm are entirely Al metallization, |
| - | |[[: | + | |
| - | |[[: | + | ^Node ^Vcore |
| - | |[[: | + | |[[: |
| - | |[[: | + | |[[: |
| - | |[[: | + | |[[: |
| - | |[[: | + | |[[: |
| - | |[[: | + | |[[: |
| - | |[[: | + | |[[: |
| - | |[[: | + | |[[: |
| - | |[[: | + | |[[: |
| - | |[[: | + | |[[: |
| - | |[[: | + | |[[: |
| - | |[[: | + | |[[: |
| - | |[[: | + | |[[: |
| - | |[[: | + | |[[: |
| - | |[[: | + | |[[: |
| + | |[[: | ||
| + | |[[: | ||
| + | |[[: | ||
| + | |[[: | ||
| \\ | \\ | ||
tech/start.1431990355.txt.gz · Last modified: 2015/05/18 23:05 by azonenberg
