foundry:nsa
Differences
This shows you the differences between two versions of the page.
| Next revision | Previous revision | ||
| foundry:nsa [2013/12/27 23:10] – created azonenberg | foundry:nsa [2025/08/04 21:24] (current) – external edit 127.0.0.1 | ||
|---|---|---|---|
| Line 3: | Line 3: | ||
| National Security Agency | National Security Agency | ||
| - | The National Security Agency operated a semiconductor | + | The NSA operates their own fab for internal projects. |
| ====== Processes ====== | ====== Processes ====== | ||
| - | * Unknown | + | * 1 μm (6" wafer, 2-3 metal) |
| + | * 800 nm (6" wafer, 2-3 metal) | ||
| + | * 500 nm (6" wafer, 2-3 metal) | ||
| + | * 220 nm (6-metal) | ||
| + | * GaAs | ||
| + | * ECL | ||
| + | * SOI on "650 to 250 nm" | ||
| ====== Devices ====== | ====== Devices ====== | ||
| {{topic> | {{topic> | ||
| + | |||
| + | ====== References ====== | ||
| + | |||
| + | http:// | ||
foundry/nsa.1388185837.txt.gz · Last modified: 2013/12/27 23:10 by azonenberg
